https://scholars.lib.ntu.edu.tw/handle/123456789/307550
DC Field | Value | Language |
---|---|---|
dc.contributor.author | JENN-GWO HWU | en |
dc.creator | Wu, You-Lin and Kuo, Kang-Min and Hwu, Jenn-Gwo | - |
dc.date.accessioned | 2018-09-10T04:48:50Z | - |
dc.date.available | 2018-09-10T04:48:50Z | - |
dc.date.issued | 1994 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0028462230&doi=10.1143%2fJJAP.33.L916&partnerID=40&md5=a07c1c86bab1a9e49c31bde76e8d0fe2 | - |
dc.description.abstract | Repeated rapid thermal N2O annealing is proposed as a new gate oxide preparation method for n-channel metal- oxide-semiconductor field-effect transistors (n-MOSFET’s). It is found that the n-MOSFET’s with gate oxide prepared by this method exhibit higher field-effect mobility and better radiation hardness when compared with those with fresh and the conventional one-time N2O -annealed gate oxides. © 1994 IOP Publishing Ltd. | - |
dc.language | en | en |
dc.relation.ispartof | Japanese Journal of Applied Physics, Part 2: Letters | en_US |
dc.source | AH | - |
dc.subject | Gate oxide; MOSFET; N2O annealing; Radiation hardness; Rapid thermal annealing | - |
dc.subject.other | Annealing; Degradation; Diffusion; Gates (transistor); Nitrogen; Oxides; Radiation; Semiconductor growth; Field effect mobility; Gate oxide preparation; Radiation hardness; Radiation induced degradation; Rapid thermal annealing; Transconductance; MOSFET devices | - |
dc.title | Reduction of radiation-induced degradation in n-channel metal-oxide-semiconductor field-effect transistors (MOSFET's) with gate oxides prepared by repeated rapid thermal N2O annealing | - |
dc.type | journal article | en |
dc.identifier.doi | 10.1143/JJAP.33.L916 | - |
dc.identifier.scopus | 2-s2.0-0028462230 | - |
dc.relation.journalvolume | 33 | - |
dc.relation.journalissue | 7 A | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.orcid | 0000-0001-9688-0812 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
Appears in Collections: | 電機工程學系 |
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