https://scholars.lib.ntu.edu.tw/handle/123456789/309153
標題: | Novel MIS Ge-Si quantum-dot infrared photodetectors | 作者: | Hsu, B.-C. Lin, C.-H. Kuo, P.-S. Chang, S.T. Chen, P.S. CHEE-WEE LIU Lu, J.-H. CHIEH-HSIUNG KUAN |
公開日期: | 2004 | 卷: | 25 | 期: | 8 | 起(迄)頁: | 544-546 | 來源出版物: | IEEE Electron Device Letters | 摘要: | The metal-insulator-semiconductor (MIS) Ge-Si quantum-dot infrared photodetectors (QDIPs) are successfully demonstrated. Using oxynitride as gate dielectric instead of oxide, the operating temperature reaches 140 and 200 K for 3-10 and 2-3 μm detection, respectively. From the photoluminescence spectrum, the quantum-dot structures are responsible for the 2-3 μm response with high operation temperature, and the wetting layer structures may be responsible for the 3-10 μm response. This novel MIS Ge/Si QDIP can increase the functionality of Si chip such as noncontact temperature sensing and is compatible with ultra-large scale integration technology. © 2004 IEEE. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-3943092601&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/309153 https://www.scopus.com/inward/record.uri?eid=2-s2.0-3943092601&doi=10.1109%2fLED.2004.831969&partnerID=40&md5=8ecb8145ffcfb96a3c8b8d899c801024 |
ISSN: | 07413106 | DOI: | 10.1109/LED.2004.831969 | SDG/關鍵字: | Dielectric materials; Emission spectroscopy; High temperature operations; Infrared detectors; Photoluminescence; Semiconducting germanium; Semiconducting silicon; Semiconductor device manufacture; Semiconductor device structures; Semiconductor quantum dots; Transmission electron microscopy; Gate dielectric; Oxynitride; Quantum dot infrared photodetectors; Quantum dot structures; Wetting layer structures; MIS devices |
顯示於: | 電機工程學系 |
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