https://scholars.lib.ntu.edu.tw/handle/123456789/324159
標題: | Mechanical strain effect of n-channel polycrystalline silicon thin-film transistors | 作者: | CHEE-WEE LIU Huang, C.-F. YING-JAY YANG Peng, C.-Y. Yuan, F. CHEE-WEE LIU |
公開日期: | 2006 | 卷: | 89 | 期: | 10 | 來源出版物: | Applied Physics Letters | 摘要: | The current change of n-channel polycrystalline silicon thin-film transistors is analyzed experimentally and theoretically under different strain conditions. Under the uniaxial strain parallel to the channel, the +6.7% and +5.3% drain current enhancements are achieved in linear and saturation regions, respectively. There are -4.4% (linear) and -4.6% (saturation) drain current degradations when the uniaxial strain is applied perpendicular to the channel. The polycrystalline silicon is mainly composed of (111)-oriented grains, measured by electron diffraction pattern. Phonon-limited mobility is theoretically calculated. There is a qualitative agreement between experiments and theoretical analysis. © 2006 American Institute of Physics. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-33748518640&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/324159 |
ISSN: | 00036951 | DOI: | 10.1063/1.2344855 | SDG/關鍵字: | Electric currents; Photons; Polycrystalline materials; Semiconducting silicon compounds; Strain; Drain current; Mechanical strain; Polycrystalline silicon thin-film transistors; Uniaxial strain; Thin film transistors |
顯示於: | 電機工程學系 |
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