https://scholars.lib.ntu.edu.tw/handle/123456789/332064
標題: | Room temperature unpassivated inas P-I-N photodetectors grown by molecular beam epitaxy | 作者: | Lin, R.-M. Tang, S.-F. SI-CHEN LEE CHIEH-HSIUNG KUAN Chen, G.-S. Sun, T.-P. Wu, J.-C. |
公開日期: | 1997 | 卷: | 44 | 期: | 2 | 起(迄)頁: | 209-213 | 來源出版物: | IEEE Transactions on Electron Devices | 摘要: | An unpassivated InAs p-i-n photodetector with excellent performance at room temperature was demonstrated. The zero-bias resistance area products of the diode with 720-nm thick i-layer are 8.1 ω-cm2 at room temperature and as high as 1.3 M ω-cm2 at 77 K. At 77 K, the diode exhibits a breakdown voltage exceeding 13 V. When tested under a 500 K blackbody source, the measured detectivity limited by Johnson noise is 1.2 × 1010 cm-Hz1/2/W at room temperature and 8.1 × 1011 cm-Hz1/2/W at 77 K. To our knowledge, this is the best data for a room temperature infrared detector. © 1997 IEEE. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0031076209&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/332064 |
ISSN: | 00189383 | DOI: | 10.1109/16.557708 | SDG/關鍵字: | Energy gap; Fermi level; Molecular beam epitaxy; Performance; Reflection high energy electron diffraction; Semiconducting indium compounds; Bandgap; Detectivity; Johnson noise; Leakage current; Room temperature; Photodiodes |
顯示於: | 電機工程學系 |
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