https://scholars.lib.ntu.edu.tw/handle/123456789/338999
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hsiao, Ching-Lien | en_US |
dc.contributor.author | CHIH-CHUNG YANG | en_US |
dc.contributor.author | Chen, Li-Chyong et al. | en_US |
dc.creator | Liu, Ting-Wei; Wu, Chien-Ting; Hsu, Hsu-Cheng; Hsu, Geng-Min; Chen, Li-Chyong; Hsiao, Wen-Yu; Yang, C. C.; Gä llströ m,; reas; Holtz, Per-Olof; Chen, Chia-Chun; Chen, Kuei-Hsien | - |
dc.date.accessioned | 2018-09-10T06:58:05Z | - |
dc.date.available | 2018-09-10T06:58:05Z | - |
dc.date.issued | 2008 | - |
dc.identifier.issn | 00036951 | - |
dc.identifier.uri | http://www.scopus.com/inward/record.url?eid=2-s2.0-41049098007&partnerID=MN8TOARS | - |
dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/338999 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-41049098007&doi=10.1063%2f1.2898214&partnerID=40&md5=768b668baa941d7d1685f0576d6de933 | - |
dc.description.abstract | High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r -plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors. © 2008 American Institute of Physics. | - |
dc.language | en | en |
dc.publisher | American Institute of Physics | - |
dc.relation.ispartof | Applied Physics Letters | - |
dc.source | AH | - |
dc.subject.other | Energy gap; Molecular beam epitaxy; Nitridation; Photoluminescence; Sapphire; X ray diffraction analysis; Zinc; High-phase-purity zinc-blende; Ultrathin crystallized interlayer; Thin films | - |
dc.title | High-phase-purity zinc-blende InN on r -plane sapphire substrate with controlled nitridation pretreatment | - |
dc.type | journal article | en |
dc.identifier.doi | 10.1063/1.2898214 | - |
dc.identifier.scopus | 2-s2.0-41049098007 | - |
dc.relation.pages | 111914-1 - 111914-3 | - |
dc.relation.journalvolume | 92 | - |
dc.relation.journalissue | 11 | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | none | - |
item.fulltext | no fulltext | - |
item.openairetype | journal article | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Center for Condensed Matter Sciences | - |
crisitem.author.orcid | 0000-0002-3476-3802 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
顯示於: | 電機工程學系 |
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