https://scholars.lib.ntu.edu.tw/handle/123456789/340686
標題: | Transverse-junction superluminescent diodes at the 1.1μm wavelength regime | 作者: | Guol, S.-H. Wang, J.-H. Wu, Y.-H. Lin, W. YING-JAY YANG Shi, J.-W. CHI-KUANG SUN |
公開日期: | 2008 | 卷: | 16 | 期: | 21 | 起(迄)頁: | 16860-16866 | 來源出版物: | Optics Express | 摘要: | We demonstrate, for the first time to our knowledge, GaAs-based transverse-junction (TJ) superluminescent diodes (SLDs) that operate at a wavelength of 1.1 μm. Due to lateral current injection by use of TJ, specified as transverse carrier flow spread in each quantum well horizontally instead of vertical well-by-well injection, nonuniform carrier distribution can be minimized among different multiple quantum wells (MQWs), which is a problem in vertical-junction (VJ) SLDs whose electroluminescent (EL) spectrum is governed by the center wavelength of QWs near the p side. In contrast with a VJ SLD, the EL spectrum of our device is determined by QWs that have a larger differential gain than the positions of QWs neighbored with a p side layer. © 2008 Optical Society of America. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-54249119537&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/340686 |
ISSN: | 10944087 | DOI: | 10.1364/OE.16.016860 | SDG/關鍵字: | Semiconducting indium compounds; Carrier distributions; Center wavelength; Differential gain; Electro-luminescent; Lateral current injections; Superluminescent diode; Vertical junctions; Wavelength regimes; Semiconductor quantum wells; article; diode laser; equipment; equipment design; illumination; instrumentation; semiconductor; Equipment Design; Equipment Failure Analysis; Lasers, Semiconductor; Lighting; Semiconductors |
顯示於: | 電機工程學系 |
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