Improvement of External Extraction Efficiency in GaN-Based LEDs by $ \\hbox{SiO}_{2}$ Nanosphere Lithography
Journal
IEEE Electron Device Letters
Journal Volume
29
Journal Issue
7
Pages
658--660
Date Issued
2008-07
Author(s)
Abstract
A practical approach to fabricate textured GaN-based light-emitting diodes (LEDs) by nanosphere lithography is presented. By spin coating a monolayer of SiO 2 nanoparticles as the mask, textured LEDs can be fabricated. Both textured p-GaN and textured indium tin oxide LEDs show significant improvement over conventional LEDs without damaging the electrical characteristics. The results show that the method is promising for manufacturing low-cost high-efficient GaN-based LEDs.
Type
journal article