https://scholars.lib.ntu.edu.tw/handle/123456789/342559
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | I. S. Lin | en_US |
dc.contributor.author | V. C. Su | en_US |
dc.contributor.author | J. B. Kuo | en_US |
dc.contributor.author | R. Lee | en_US |
dc.contributor.author | G. S. Lin | en_US |
dc.contributor.author | D. Chen | en_US |
dc.contributor.author | C. S. Yeh | en_US |
dc.contributor.author | C. T. Tsai | en_US |
dc.contributor.author | M. Ma | en_US |
dc.contributor.author | JAMES-B KUO | zz |
dc.creator | I. S. Lin;V. C. Su;J. B. Kuo;R. Lee;G. S. Lin;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma | - |
dc.date.accessioned | 2018-09-10T07:08:18Z | - |
dc.date.available | 2018-09-10T07:08:18Z | - |
dc.date.issued | 2008-06 | - |
dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/342559 | - |
dc.language | en | en |
dc.relation.ispartof | IEEE Transactions Electron Devices | en_US |
dc.source | AH-anncc | - |
dc.title | Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device | - |
dc.type | journal article | en |
dc.identifier.doi | 10.1109/ted.2008.922858 | - |
dc.relation.pages | 1558-1562 | - |
dc.relation.journalvolume | 55 | - |
dc.relation.journalissue | 6 | - |
item.openairetype | journal article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
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