https://scholars.lib.ntu.edu.tw/handle/123456789/349416
Title: | Inversion-channel GaN MOSFET using atomic-layer-deposited Al 2 O 3 as gate dielectric | Authors: | Chang, YC Chang, WH Chiu, HC Chang, YH Tung, LT Lee, CH Hong, M Kwo, J Hong, JM Tsai, CC MINGHWEI HONG |
Issue Date: | 2009 | Start page/Pages: | 131-132 | Source: | International Symposium on VLSI Technology, Systems, and Applications, 2009 | URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/349416 |
Appears in Collections: | 應用物理研究所 |
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