https://scholars.lib.ntu.edu.tw/handle/123456789/350419
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lan, H. | en_US |
dc.contributor.author | Lin, Y.-S. | en_US |
dc.contributor.author | Meng, C.-C. | en_US |
dc.contributor.author | Lu, S.-S. | en_US |
dc.date.accessioned | 2018-09-10T07:37:06Z | - |
dc.date.available | 2018-09-10T07:37:06Z | - |
dc.date.issued | 1999 | - |
dc.identifier.uri | http://www.scopus.com/inward/record.url?eid=2-s2.0-0032713670&partnerID=MN8TOARS | - |
dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/350419 | - |
dc.language | en | en |
dc.relation.ispartof | IEEE Transactions on Electron Devices | en_US |
dc.source | AH-Scopus to ORCID | - |
dc.title | The effect of gate recess profile on device performance of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.2/Ga/sub 0.8/As doped-channel FET's | - |
dc.type | journal article | en |
dc.identifier.doi | 10.1109/16.737440 | - |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
dc.relation.pages | 48-54 | - |
dc.relation.journalvolume | 46 | - |
dc.relation.journalissue | 1 | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
crisitem.author.dept | MediaTek-NTU Research Center | - |
crisitem.author.orcid | 0000-0003-3106-3154 | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
顯示於: | 電機工程學系 |
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