https://scholars.lib.ntu.edu.tw/handle/123456789/356362
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Cheng, J.-Y. | en_US |
dc.contributor.author | Lu, H.-T. | en_US |
dc.contributor.author | Yang, C.-Y. | en_US |
dc.contributor.author | Hwu, J.-G. | en_US |
dc.contributor.author | JENN-GWO HWU | zz |
dc.creator | Cheng, J.-Y.;Lu, H.-T.;Yang, C.-Y.;Hwu, J.-G. | - |
dc.date.accessioned | 2018-09-10T08:09:40Z | - |
dc.date.available | 2018-09-10T08:09:40Z | - |
dc.date.issued | 2010 | - |
dc.identifier.uri | http://www.scopus.com/inward/record.url?eid=2-s2.0-78751524776&partnerID=MN8TOARS | - |
dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/356362 | - |
dc.language | en | en |
dc.relation.ispartof | ICSICT-2010 -10th IEEE International Conference on Solid-State and Integrated Circuit Technology | - |
dc.source | AH | - |
dc.title | Edge field enhanced deep depletion phenomenon in MOS structures with ultra-thin gate oxides | - |
dc.type | conference paper | en |
dc.identifier.doi | 10.1109/ICSICT.2010.5667446 | - |
dc.relation.pages | 844-846 | - |
item.fulltext | no fulltext | - |
item.openairetype | conference paper | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.orcid | 0000-0001-9688-0812 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
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