https://scholars.lib.ntu.edu.tw/handle/123456789/359228
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | H. J. Hung | en_US |
dc.contributor.author | J. B. Kuo | en_US |
dc.contributor.author | D. Chen | en_US |
dc.contributor.author | C. S. Yeh | en_US |
dc.contributor.author | JAMES-B KUO | zz |
dc.creator | H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh | - |
dc.date.accessioned | 2018-09-10T08:18:06Z | - |
dc.date.available | 2018-09-10T08:18:06Z | - |
dc.date.issued | 2010-05 | - |
dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/359228 | - |
dc.language | en | en |
dc.relation.ispartof | Microelectronics Reliability | en_US |
dc.source | AH-anncc | - |
dc.title | Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect | - |
dc.type | journal article | en |
dc.identifier.doi | 10.1016/j.microrel.2010.01.015 | - |
dc.identifier.scopus | 2-s2.0-77953133970 | - |
dc.identifier.isi | WOS:000278728700007 | - |
dc.relation.pages | 607-609 | - |
dc.relation.journalvolume | 50 | - |
dc.relation.journalissue | 5 | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.cerifentitytype | Publications | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
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