https://scholars.lib.ntu.edu.tw/handle/123456789/363033
Title: | Influence of residual ions and gases at Si/SiO2 interface in ultra-thin gate oxide | Authors: | Chen, T.-Y. Lu, H.-W. Hwu, J.-G. JENN-GWO HWU |
Issue Date: | 2011 | Journal Volume: | 35 | Journal Issue: | 8 | Start page/Pages: | 201-210 | Source: | ECS Transactions | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-79960859574&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/363033 |
DOI: | 10.1149/1.3567751 |
Appears in Collections: | 電機工程學系 |
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