https://scholars.lib.ntu.edu.tw/handle/123456789/365226
Title: | Physical mechanism of HfO<inf>2</inf>-based bipolar resistive random access memory | Authors: | CHEE-WEE LIU Chang, H.-L. Li, H.-C. Liu, C.W. Chen, F. Tsai, M.-J. CHEE-WEE LIU |
Issue Date: | 2011 | Start page/Pages: | 110-113 | Source: | International Symposium on VLSI Technology, Systems, and Applications | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-79959919688&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/365226 |
DOI: | 10.1109/VTSA.2011.5872253 |
Appears in Collections: | 電機工程學系 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.