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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Interface trap redistribution and deep depletion behavior of non-planar MOS with ultra thin oxide grown by anodic oxidation
Details
Interface trap redistribution and deep depletion behavior of non-planar MOS with ultra thin oxide grown by anodic oxidation
Journal
ECS Transactions
Journal Volume
53
Journal Issue
1
Pages
331-341
Date Issued
2013
Author(s)
Tseng, P.-H.
Hwu, J.-G.
JENN-GWO HWU
DOI
10.1149/05301.0331ecst
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-84885623869&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/378073
Type
conference paper