|Title:||Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure||Authors:||Laroche, D.
|Issue Date:||2015||Journal Volume:||106||Journal Issue:||14||Source:||Applied Physics Letters||Abstract:||
We report the design, the fabrication, and the magneto-transport study of an electron bilayer system embedded in an undoped Si/SiGe double-quantum-well heterostructure. Combined Hall densities (nHall) ranging from 2.6-×-1010-cm-2 to 2.7-×-1011-cm-2 were achieved, yielding a maximal combined Hall mobility (μHall) of 7.7-×-105-cm2/(V · s) at the highest density. Simultaneous electron population of both quantum wells is clearly observed through a Hall mobility drop as the Hall density is increased to nHall > 3.3-×-1010-cm-2, consistent with Schrödinger-Poisson simulations. The integer and fractional quantum Hall effects are observed in the device, and single-layer behavior is observed when both layers have comparable densities, either due to spontaneous interlayer coherence or to the symmetric-antisymmetric gap. © 2015 AIP Publishing LLC.
|DOI:||10.1063/1.4917296||SDG/Keyword:||Hall mobility; Quantum chemistry; Quantum Hall effect; Quantum theory; Silicon; Anti-symmetric; Bilayer systems; Double quantum well; Electron population; Fractional quantum Hall effects; Magnetotransports; Si/SiGe; Single layer; Semiconductor quantum wells|
|Appears in Collections:||電機工程學系|
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