https://scholars.lib.ntu.edu.tw/handle/123456789/396608| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Y.-J. | en_US |
| dc.contributor.author | JIUN-YUN LI et al. | zz |
| dc.creator | Hou, F.-J.; Chuang, S.-S.; Hsueh, F.-K.; Kao, K.-H.; Sung, P.-J.; Yuan, W.-Y.; Yao, J.-Y.; Lu, Y.-C.; Lin, K.-L.; Wu, C.-T.; Chen, H.-C.; Chen, B.-Y.; Huang, G.-W.; Chen, H.J.H.; Li, J.-Y.; Li, Y.; Samukawa, S.; Chao, T.-S.; Tseng, T.-Y.; Wu, W.-F.; Hou, T.-H.; Yeh, W.-K. | - |
| dc.date.accessioned | 2018-09-10T15:33:12Z | - |
| dc.date.available | 2018-09-10T15:33:12Z | - |
| dc.date.issued | 2016 | - |
| dc.identifier.uri | http://www.scopus.com/inward/record.url?eid=2-s2.0-84964031558&partnerID=MN8TOARS | - |
| dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/396608 | - |
| dc.language | en | en |
| dc.relation.ispartof | International Electron Devices Meeting, IEDM | - |
| dc.source | AH-Scopus to ORCID | - |
| dc.title | Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four {111} facets by dry etch technology | - |
| dc.type | conference paper | en |
| dc.identifier.doi | 10.1109/IEDM.2015.7409701 | - |
| dc.relation.pages | 15.1.1-15.1.4 | - |
| dc.relation.journalvolume | 2016-February | - |
| item.openairetype | conference paper | - |
| item.fulltext | no fulltext | - |
| item.grantfulltext | none | - |
| item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
| item.cerifentitytype | Publications | - |
| crisitem.author.dept | Electrical Engineering | - |
| crisitem.author.dept | Electronics Engineering | - |
| crisitem.author.orcid | 0000-0003-4905-9954 | - |
| crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
| crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
| Appears in Collections: | 電機工程學系 | |
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