|Title:||The improving Si <inf>0.5</inf> Ge <inf>0.5</inf> /Si interface quality through a low energy hydrogen plasma cleaning process and positron annihilation spectroscopy||Authors:||Hsieh, C.-F.
|Keywords:||Defect; Low energy hydrogen plasma cleaning process; Positron annihilation spectroscopy; Sige-based devices||Issue Date:||2014||Journal Volume:||4||Journal Issue:||1||Start page/Pages:||323-327||Source:||International Journal of Automation and Smart Technology||Abstract:||
Positron Annihilation Spectra (PAS), Raman, and photoluminescence spectroscopy reveal that Sio.5Geo.5/Si interface quality can be dramatically improved through a low energy plasma cleaning process using hydrogen. In the PAS, the particularly small values of lifetime and intensity near the Sio.5Geo.5/Si interface in the treated sample indicate a 2.25 times reduction in defect concentration. Fewer defects were found in the interface, resulting in a high compressive strain of about 0.36 % in the top layer, which can be observed in Raman spectra, and a 1.39 times increase to the radiative recombination rate for the infrared emission, which can be observed in the photoluminescence spectra. Improved Sio.5Geo.5/Si interface quality leads to improved optical and electrical characteristics in SiGe-based devices in a broader range of photovoltaic applications. The PAS is also shown to be a useful metrology tool for quantifying defects in SiGe-based devices. © 2014 International Journal of Automation and Smart Technology.
|Appears in Collections:||電機工程學系|
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