The improving Si 0.5 Ge 0.5 /Si interface quality through a low energy hydrogen plasma cleaning process and positron annihilation spectroscopy
Journal
International Journal of Automation and Smart Technology
Journal Volume
4
Journal Issue
1
Pages
323-327
Date Issued
2014
Author(s)
Abstract
Positron Annihilation Spectra (PAS), Raman, and photoluminescence spectroscopy reveal that Sio.5Geo.5/Si interface quality can be dramatically improved through a low energy plasma cleaning process using hydrogen. In the PAS, the particularly small values of lifetime and intensity near the Sio.5Geo.5/Si interface in the treated sample indicate a 2.25 times reduction in defect concentration. Fewer defects were found in the interface, resulting in a high compressive strain of about 0.36 % in the top layer, which can be observed in Raman spectra, and a 1.39 times increase to the radiative recombination rate for the infrared emission, which can be observed in the photoluminescence spectra. Improved Sio.5Geo.5/Si interface quality leads to improved optical and electrical characteristics in SiGe-based devices in a broader range of photovoltaic applications. The PAS is also shown to be a useful metrology tool for quantifying defects in SiGe-based devices. © 2014 International Journal of Automation and Smart Technology.
Subjects
Defect; Low energy hydrogen plasma cleaning process; Positron annihilation spectroscopy; Sige-based devices
SDGs
Type
journal article