Publisher's note: "Optimization of dislocation edge stress effects for Si N-type metal-oxide-semiconductor field-effect transistors" [Jpn. J. Appl. Phys. 52, 04CC20 (2013)]
Journal
Japanese Journal of Applied Physics
Journal Volume
54
Journal Issue
3
Pages
1314-1316
Date Issued
2015
Author(s)
Type
corrigendum