Ferroelectric Al:HfO 2 negative capacitance FETs
Journal
International Electron Devices Meeting
Pages
23.3.1-23.3.4
Date Issued
2018
Author(s)
Lee, M.H.
Chen, P.-G.
Fan, S.-T.
Chou, Y.-C.
Kuo, C.-Y.
Tang, C.-H.
Chen, H.-H.
Gu, S.-S.
Hong, R.-C.
Wang, Z.-Y.
Chen, S.-Y.
Liao, C.-Y.
Chen, K.-T.
Chang, S.T.
Li, K.-S.
Abstract
The first experimental demonstration of ferroelectric Al:HfO2 (FE-HAO) FETs is proceeded with negative capacitance (NC) effect. The subthreshold swing (SS) of 40 mV/dec and 39 mV/dec for forward and reverse sweep, respectively, as well as almost hysteresis-free are achieved. The partial orthorhombic phase of FE-HAO is confirmed both with (PMA) and without (PDA) a capping layer. A gradual transition of polarization after 1000°C annealing is obtained with increasing Al concentration for large remanent polarization (P r ), coercive field (E c ), and high dielectric constant. The similar physical thickness (∼7nm) of ferroelectric-HfZrO x (FE-HZO) FET is discussed for comparison. The NC modeling is performed to validate the NC effect for the Al:HfOx material system. The transient behavior is performed at room temperature and low temperature, and the dynamic NC model is discussed.
Type
conference paper