Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments
Journal
Journal of Physics D: Applied Physics
Pages
55103
Date Issued
2012
Author(s)
Li-Tien Huang
Ming-Lun Chang
Jhih-Jie Huang
Chin-Lung Kuo
Hsin-ChihLin
Min-Hung Lee
Miin-Jang Chen
Type
journal article