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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel.
Details
The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel.
Journal
Vacuum
Journal Volume
140
Pages
66
Date Issued
2017
Author(s)
M. H.Liao
H.-W. Hsuh
C.-C. Lee
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/404565
Type
journal article
