Ultra-high performance flexible piezopotential gated In1−xSnxSe phototransistor
Journal
Nanoscale
Journal Volume
10
Journal Issue
39
Pages
18642-18650
Date Issued
2018
Author(s)
Christy Roshini Paul Inbaraj
Roshan Jesus Mathew
Golam Haider
Tzu-Pei Chen
Rajesh Kumar Ulaganathan
Raman Sankar
Krishna Prasad Bera
Yu-Ming Liao
Monika Kataria
Hung-I Lin
Fang Cheng Chou
Chih-Hao Leea?
Yang-Fang Chen
Abstract
Se, resulting in good performance on a freeform surface. Thus, our multifunctional device is useful for the development of a variety of advanced applications and will help meet the demand of emerging technologies.
Type
journal article
