Crosslinkable high dielectric constant polymer dielectrics for low voltage organic field-effect transistor memory devices
Journal
Journal of Polymer Science, Part A: Polymer Chemistry
Journal Volume
54
Journal Issue
19
Pages
3224-3236
Date Issued
2016
Author(s)
Abstract
ABSTRACT I n this study, we successfully synthesized water/methanol soluble random copolymers with a high dielectric constant, poly(n‐(hydroxymethyl) acrylamide‐ co‐ 5‐(9‐(5‐(diethylamino)pentyl)−2‐(4‐vinylphenyl)−9H‐fluorene(P(NMA‐ co ‐F6NSt)), which contained chemical crosslinkable segment (NMA) and hole trapping building block (F6NSt). The feeding molar ratios of two monomers (NMA:F6NSt) were set as 100:0, 95:5, 80:20, and 67:33 for the copolymers of P1 , P2 , P3, and P4 , respectively. The crosslinked P(NMA‐ co ‐F6NSt) thin film could serve as both dielectric and charge storage layers in organic field‐effect transistor (OFET) memory device and exhibited high k (i.e., 4.91–6.47) characteristics, leading to a low voltage operation and a small power consumption. Devices based on the P1 ‐ P4 dielectrics showed excellent insulating properties and good charge storage performance under a low operating voltage in a range of ±5V because of tightly network structures and well‐dispersed trapping cites. In particular, P3 ‐based memory device exhibited a large memory window of 4.13 V with stable data retention stability over 10 4 s, a large on/off ratio of 10 4 , and good endurance characteristics as high as 200 cycles. The above results suggested that a high‐performance OFET memory device could be facilely achieved using the novel crosslinkable high‐ k copolymers. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2016 , 54 , 3224–3236
SDGs
Type
journal article