Controlled Orientation and Improved Photovoltaic Characteristics of Cu(In,Ga)Se2 Solar Cells via Using In2Se3 Seeding Layers
Journal
Journal of Nanomaterials
Journal Volume
2015
Date Issued
2015
Author(s)
Abstract
In2Se3 films were utilized as seeding layers in the synthesis of Cu(In,Ga)Se2 films via the spin-coating route. Selenizing the indium-containing precursors at 400¢XC resulted in the formation of the hexagonal £^-In2Se3 with the preferred (006) orientation. Increasing the selenization temperature to 500¢XC yielded the (300)-oriented £^-In2Se3. Using the preferred (006)-oriented In2Se3 as seeding layers produced the preferred (112)-oriented Cu(In,Ga)Se2 film because of the crystalline symmetry. In contrast, the use of the (300)-oriented In2Se3 as seeding layers yielded the (220/204)-oriented Cu(In,Ga)Se2 films. According to results obtained using SEM and the Hall effect, (112)-oriented Cu(In,Ga)Se2 films had a denser morphology and more favorable electrical properties. Using the (112)-oriented Cu(In,Ga)Se2 films as the absorber layer in the solar devices resulted in a significant increase in the conversion efficiency. ? 2015 Fu-Shan Chen et al.
SDGs
Other Subjects
Gallium compounds; Indium compounds; Solar absorbers; Solar cells; Solar power generation; Absorber layers; Controlled orientation; Crystalline symmetry; Cu(In , Ga)Se2; Cu(In ,Ga)Se2 films; Photovoltaic characteristics; Seeding layers; Selenization temperatures; Selenium compounds
Type
journal article