標題: | Controlled Orientation and Improved Photovoltaic Characteristics of Cu(In,Ga)Se<inf>2</inf> Solar Cells via Using In<inf>2</inf>Se<inf>3</inf> Seeding Layers |
作者: | Chen F.-S. Yang C.-Y. Sung J.-C. Lu C.-H. |
公開日期: | 2015 |
卷: | 2015 |
來源出版物: | Journal of Nanomaterials |
摘要: | In2Se3 films were utilized as seeding layers in the synthesis of Cu(In,Ga)Se2 films via the spin-coating route. Selenizing the indium-containing precursors at 400¢XC resulted in the formation of the hexagonal £^-In2Se3 with the preferred (006) orientation. Increasing the selenization temperature to 500¢XC yielded the (300)-oriented £^-In2Se3. Using the preferred (006)-oriented In2Se3 as seeding layers produced the preferred (112)-oriented Cu(In,Ga)Se2 film because of the crystalline symmetry. In contrast, the use of the (300)-oriented In2Se3 as seeding layers yielded the (220/204)-oriented Cu(In,Ga)Se2 films. According to results obtained using SEM and the Hall effect, (112)-oriented Cu(In,Ga)Se2 films had a denser morphology and more favorable electrical properties. Using the (112)-oriented Cu(In,Ga)Se2 films as the absorber layer in the solar devices resulted in a significant increase in the conversion efficiency. ? 2015 Fu-Shan Chen et al. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/407368 |
ISSN: | 16874110 |
DOI: | 10.1155/2015/802178 |
SDG/關鍵字: | Gallium compounds; Indium compounds; Solar absorbers; Solar cells; Solar power generation; Absorber layers; Controlled orientation; Crystalline symmetry; Cu(In , Ga)Se2; Cu(In ,Ga)Se2 films; Photovoltaic characteristics; Seeding layers; Selenization temperatures; Selenium compounds |
顯示於: | 化學工程學系
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