Solution synthesis and characterization of n-type zinc indium selenide films for the buffer layer used in Cu(In,Ga)Se2 solar cells
Journal
Journal of Materials Science: Materials in Electronics
Journal Volume
25
Journal Issue
8
Pages
3622-3628
Date Issued
2014
Author(s)
Lin S.-H.
Abstract
Zinc indium selenide (ZnIn2Se4) films were successfully prepared via a spin coating process followed by a selenization treatment. The single-phased ZnIn2Se4 derived from spin coated precursors was synthesized on selenization at 450 ¢XC for 0.5 h. The crystal structure was confirmed to be a defective chalcopyrite structure. Optical absorption spectra revealed that the value of a band gap of ZnIn 2Se4 was equal to 1.83 eV. Via the spin coating route with a sequential selenization process, films with a densified microstructure were obtained. Additionally, raising the selenization temperatures significantly increased the crystallinity and n-type conductivity of the prepared films. Conversion efficiency of the Cu(In,Ga)Se2 solar device using the spin-coated ZnIn2Se4 films reached 3.52 %. Moreover, the series resistance and shunt conductance of the fabricated solar cells were decreased, owing to an improved p-n quality and reduced defects of the prepared ZnIn2Se4 layers. Results of this study demonstrate that the spin coating process was is an effective approach to prepare the n-type ZnIn2Se4 layers used in Cu(In,Ga)Se2 solar cells. ? 2014 Springer Science+Business Media New York.
Type
journal article