https://scholars.lib.ntu.edu.tw/handle/123456789/407375
標題: | Solution synthesis and characterization of n-type zinc indium selenide films for the buffer layer used in Cu(In,Ga)Se2 solar cells | 作者: | Lin S.-H. Lu C.-H. |
公開日期: | 2014 | 卷: | 25 | 期: | 8 | 起(迄)頁: | 3622-3628 | 來源出版物: | Journal of Materials Science: Materials in Electronics | 摘要: | Zinc indium selenide (ZnIn2Se4) films were successfully prepared via a spin coating process followed by a selenization treatment. The single-phased ZnIn2Se4 derived from spin coated precursors was synthesized on selenization at 450 ¢XC for 0.5 h. The crystal structure was confirmed to be a defective chalcopyrite structure. Optical absorption spectra revealed that the value of a band gap of ZnIn 2Se4 was equal to 1.83 eV. Via the spin coating route with a sequential selenization process, films with a densified microstructure were obtained. Additionally, raising the selenization temperatures significantly increased the crystallinity and n-type conductivity of the prepared films. Conversion efficiency of the Cu(In,Ga)Se2 solar device using the spin-coated ZnIn2Se4 films reached 3.52 %. Moreover, the series resistance and shunt conductance of the fabricated solar cells were decreased, owing to an improved p-n quality and reduced defects of the prepared ZnIn2Se4 layers. Results of this study demonstrate that the spin coating process was is an effective approach to prepare the n-type ZnIn2Se4 layers used in Cu(In,Ga)Se2 solar cells. ? 2014 Springer Science+Business Media New York. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/407375 | ISSN: | 09574522 | DOI: | 10.1007/s10854-014-2065-1 |
顯示於: | 化學工程學系 |
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