Synthesis and characterization of B2O3-doped zinc oxide thin films prepared via RF-magnetron sputtering
Journal
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Journal Volume
45
Journal Issue
01:00 AM
Pages
228-230
Date Issued
2006
Author(s)
Abstract
The effects of B2O3 addition on the crystal structure and morphological features of ZnO thin films prepared via RF-magnetron sputtering have been studied. Doping B2O3 into ZnO films resulted in a c-axis preferred orientation and facilitated the deposition process. The microstructures of the prepared films markedly varied with the amount of B2O3 doping and oxygen content during sputtering. The presence of B2O3 in the ZnO films played an important role in the transmission of light and resulted in enhanced transmission in the visible range. The band-gap energies of the B 2O3-doped ZnO films significantly decreased as the B 2O3 amount increased and the oxygen content decreased during sputtering. ? 2006 The Japan Society of Applied Physics.
Subjects
Doping
Sputtering
Thin films
Zinc oxide
SDGs
Type
journal article