https://scholars.lib.ntu.edu.tw/handle/123456789/409331
標題: | Millimeter-long and uniform silicon nanocables | 作者: | Zhang M.-L. Fan X. Jie J.-S. Hsu J.-P. Wong N.-B. |
公開日期: | 2008 | 卷: | 112 | 期: | 41 | 起(迄)頁: | 15943-15947 | 來源出版物: | Journal of Physical Chemistry C | 摘要: | An ultralong Si nanocable has been prepared by simple thermal evaporation of SiO powder mixed with a small amount of Sn. The nanocable has a uniform diameter of about 680 nm and millimeters in length. The core of the nanocable is single-crystal Si with an average diameter of 160 nm, and the shell is composed of compact amorphous SiO x with a uniform thickness of 260 nm. The cladding SiO x emits strong light in a wide spectral range from UV to visible. In particular, each nanocable has a droplet head of Si-Sn eutectic and an uncovered Si core at the tail. The nanocables can be directly fabricated into metal-oxide-semiconductor field effect transistors (MOSFETs) via simple thermal deposition of Au electrodes. The performance of the MOSFETs reveals that the Si nanocables are p-type semiconductors with 1.1 ¡Ñ 10 17 cm -3 hole concentration and 3.69 cm 2 V -1 s -1 hole mobility. ? 2008 American Chemical Society. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/409331 | ISSN: | 19327447 | DOI: | 10.1021/jp802110y |
顯示於: | 化學工程學系 |
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