|Title:||Effects of electro-mechanical stressing on the electrical characterization of on-plastic a-Si:H thin film transistors||Authors:||Chen J.Z.
|Issue Date:||2009||Journal Volume:||1153||Start page/Pages:||417-422||Source:||Materials Research Society Symposium Proceedings||Abstract:||
We analyzed the effect of electromechanical stressing on the electrical characteristics of hydrogenated amorphous silicon thin-film transistors. It had been shown that the TFTs, fabricated at 150 ¢XC, respond to tension/compression by a rise/fall in electron mobility. In TFTs fabricated using the same process, a slight shift of threshold voltage was observed under prolonged high compressive strain and the gate leakage current slightly increases after ?2% compressive strain. In general, the change of TFT performance due to pure mechanical straining is small in comparison to electrical gate-bias stressing. From the comparison among Maxwell stress (induced by electrical gate-bias stressing), mechanical stress (applied by bending), and drifting electrical force for passivated hydrogen atom, the most significant cause for the change of electrical characterization of a-Si:H TFTs should be the trapping charges inside the dielectric, under combined electrical and mechanical stressing. The mechanical stress does not act on Si-H bonds to drift hydrogen atoms, while it is mainly balanced by the rigid Si-Si networks in a-Si:H or a-SiNx. Therefore, mechanical stress has very little effect on the instability of low temperature processed a-Si:H TFTs. ? 2009 Materials Research Society.
2009 MRS Spring Meeting,14 April 2009 through 16 April 2009,San Francisco, CA
|Appears in Collections:||應用力學研究所|
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