https://scholars.lib.ntu.edu.tw/handle/123456789/425213
標題: | Temperature and active layer thickness dependent stability of on-plastic a-Si:H thin film transistors fabricated at 150¢XC | 作者: | Chen J.-Z. Cheng I.-C. JIAN-ZHANG CHEN |
公開日期: | 2008 | 起(迄)頁: | 725-726 | 來源出版物: | 2nd International Conference on Integration and Commercialization of Micro and Nanosystems | 摘要: | Stability is an important issue for the application of TFTs. In this paper, we present the effects temperature, and humidity on the stability of inverted-staggered back-channel-cut a-Si:H TFTs of various active layer thicknesses. The amorphous TFTs were made at a process temperature of 150¢XC on 51-£gm thick Kapton polyimide foil substrates. With active layer thickness of 50nm, humidity reversibly varies the characteristics of TFTs, but TFTs of active layer thickness greater than 100 nm is pretty stable to the humidity change, which is attributed to backchannel conduction. The temperature dependent stability and characteristics of 200nm active-layer thickness TFTs were analyzed from 20¢XC to 60¢XC. Rising temperature from 20¢XC to 60¢XC, the threshold voltage (Vt) drops about 2 volts; on-off current ratio decreases by one order of magnitude mainly due to thermally excited carriers [1]. Copyright ? 2008 by ASME. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/425213 | ISBN: | 0791842940 9780791842942 |
顯示於: | 應用力學研究所 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。