|Title:||Effects of SiNx passivation and gate metal roughness on the performance of on-plastic a-Si:H TFTs||Authors:||Chen J.Z.
|Issue Date:||2008||Journal Volume:||11||Journal Issue:||2||Start page/Pages:||H26-H28||Source:||Electrochemical and Solid-State Letters||Abstract:||
We studied a-Si:H thin film transistors (TFTs) with gate metal/substrate combinations, including Cr or AlCr gate metal on plain Kapton, and CrAlCr on SiNx passivated Kapton, to identify effects of roughness on TFT performance. TFTs with CrAlCr on SiNx passivated Kapton are superior in the essential characteristics: low threshold voltage, low gate leakage current Igs, high on-current, high field-effect mobility, and steep subthreshold slope. The off-current is comparable to those of TFTs on plain Kapton. The Igs of all TFTs rises with increasing surface roughness of the gate metal. The major contributor to roughness is the metal film itself, not the substrate. ? 2007 The Electrochemical Society.
|Appears in Collections:||應用力學研究所|
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