Repository logo
  • English
  • 中文
Log In
Have you forgotten your password?
  1. Home
  2. College of Engineering / 工學院
  3. Applied Mechanics / 應用力學研究所
  4. Positive gate-bias temperature stability of RF-sputtered Mg 0.05Zn 0.95O active-layer thin-film transistors
 
  • Details

Positive gate-bias temperature stability of RF-sputtered Mg 0.05Zn 0.95O active-layer thin-film transistors

Journal
IEEE Transactions on Electron Devices
Journal Volume
59
Journal Issue
1
Pages
151-158
Date Issued
2012
Author(s)
Tsai Y.-S.
Chen J.-Z.
JIAN-ZHANG CHEN  
DOI
10.1109/TED.2011.2172212
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/425242
URL
https://www2.scopus.com/inward/record.uri?eid=2-s2.0-84855449286&doi=10.1109%2fTED.2011.2172212&partnerID=40&md5=018f18b5afac99f77ff5ec49d5e7f303
Abstract
This paper investigates the positive gate-bias temperature stability of RF-sputtered bottom-gate Mg 0.05Zn 0.95O active-layer thin-film transistors (TFTs) annealed at 200 ¢XC for 5 h and 350 ¢XC for 30 min. Although the TFT devices initially exhibited similar electrical characteristics, the TFTs annealed at 350 ¢XC demonstrated stability characteristics superior to those annealed at 200 ¢XC. This result is due to the improved crystallinity and more stable phase with greater proportion of Zn replaced by Mg in the ZnO crystals. The results also reveal a hump shape in the subthreshold region of the transfer characteristics, which is induced by the positive gate-bias stress at elevated temperatures. The hump phenomenon was suppressed in the TFT annealed at 350 ¢XC. The hump disappeared shortly after removing the positive gate bias, suggesting that this phenomenon was meta-stable and resulted from gate-bias-induced electric field. One possible mechanism responsible for the hump formation in the transfer curve is the gate-field-induced back-channel parasitic transistor. Alternatively, this hump phenomenon might have been due to the creation of meta-stable vacancies in which the neutral defects were thermally excited and released electrons into the active layer to form a leakage path when the TFTs were subjected to gate-bias stress at elevated temperatures. ? 2006 IEEE.
Subjects
Gate-bias stability
MgO
MgZnO
oxide thin-film transistors (TFTs)
thermal stability
Type
journal article

臺大位居世界頂尖大學之列,為永久珍藏及向國際展現本校豐碩的研究成果及學術能量,圖書館整合機構典藏(NTUR)與學術庫(AH)不同功能平台,成為臺大學術典藏NTU scholars。期能整合研究能量、促進交流合作、保存學術產出、推廣研究成果。

To permanently archive and promote researcher profiles and scholarly works, Library integrates the services of “NTU Repository” with “Academic Hub” to form NTU Scholars.

總館學科館員 (Main Library)
醫學圖書館學科館員 (Medical Library)
社會科學院辜振甫紀念圖書館學科館員 (Social Sciences Library)

開放取用是從使用者角度提升資訊取用性的社會運動,應用在學術研究上是透過將研究著作公開供使用者自由取閱,以促進學術傳播及因應期刊訂購費用逐年攀升。同時可加速研究發展、提升研究影響力,NTU Scholars即為本校的開放取用典藏(OA Archive)平台。(點選深入了解OA)

  • 請確認所上傳的全文是原創的內容,若該文件包含部分內容的版權非匯入者所有,或由第三方贊助與合作完成,請確認該版權所有者及第三方同意提供此授權。
    Please represent that the submission is your original work, and that you have the right to grant the rights to upload.
  • 若欲上傳已出版的全文電子檔,可使用Open policy finder網站查詢,以確認出版單位之版權政策。
    Please use Open policy finder to find a summary of permissions that are normally given as part of each publisher's copyright transfer agreement.
  • 網站簡介 (Quickstart Guide)
  • 使用手冊 (Instruction Manual)
  • 線上預約服務 (Booking Service)
  • 方案一:臺灣大學計算機中心帳號登入
    (With C&INC Email Account)
  • 方案二:ORCID帳號登入 (With ORCID)
  • 方案一:定期更新ORCID者,以ID匯入 (Search for identifier (ORCID))
  • 方案二:自行建檔 (Default mode Submission)
  • 方案三:學科館員協助匯入 (Email worklist to subject librarians)

Built with DSpace-CRIS software - Extension maintained and optimized by 4Science