|Title:||Silicon thin-film transistors on flexible polymer foil substrates||Authors:||Cheng I.-C.
|Keywords:||Amorphous silicon;Plastic substrate;Thin film transistor||Issue Date:||2008||Journal Volume:||8||Start page/Pages:||1455-1458||Source:||Proceedings of International Meeting on Information Display||Abstract:||
Amorphous silicon (a-Si:H) thin-film transistors (TFTs) are fabricated on flexible organic polymer foil substrates. As-fabricated performance, electrical bias-stability at elevated temperatures, electrical response under mechanical flexing, and prolonged mechanical stability of the TFTs are studied. TFTs made on plastic at ultra low process temperatures of 150¢XC show initial electrical performance like TFTs made on glass but large gate-bias stress instability. An abnormal saturation of the instability against operation temperature is observed.
8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008,13 October 2008 through 17 October 2008,Ilsan
|Appears in Collections:||應用力學研究所|
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