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  4. Modeling and simulation of heat transfer characteristics of 12-inch wafer on electrostatic chuck
 
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Modeling and simulation of heat transfer characteristics of 12-inch wafer on electrostatic chuck

Journal
2015 10th International Microsystems, Packaging, Assembly and Circuits Technology Conference
Pages
304-307
ISBN
9781467383561
Date Issued
2015
Author(s)
Hsu K.-C.
Yang J.-Y.
Chen J.-Z.
Yu Y.-H.
Chen Y.-J.
JIAN-ZHANG CHEN  
DOI
10.1109/IMPACT.2015.7365248
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/425245
URL
https://www2.scopus.com/inward/record.uri?eid=2-s2.0-84964211352&doi=10.1109%2fIMPACT.2015.7365248&partnerID=40&md5=04fa31fea9f0f349dd6ad1e866ea9c79
Abstract
The content of this study observes the heat transfer characteristics of the wafer on the AlN and Al2O3 electrostatic chuck (ESC), which were utilized under the various operational conditions, is studied for the potential improvement on the temperature uniformity of the 12-inch wafer. In addition, an identical study on the expanded chuck (299mm) is also carried out for a comparison of the original chuck (293mm). In addition, a good agreement with previous work was achieved and examined the reliability in this model system. It demonstrates the AlN chuck exhibits an excellent ability for the wafer cooling on the edge, but is unfavorable to the temperature uniformity. In contrast, Al2O3 chuck is well capable of controlling the uniformity. While the original chuck are modified to the expanded chuck, it shows a contrastive results obtained in histogram with a standard deviation (SD), as an indicator of the temperature uniformity, as compared with that of the original chuck. The AlN expanded chuck plays a critical role on the SD which shows a more linear dependence than that of Al2O3 one which becomes independent on the pressure of beyond 5 torr. ? 2015 IEEE.
Type
conference paper

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