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  4. Characterization of Hf/Mg co-doped ZnO thin films after thermal treatments
 
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Characterization of Hf/Mg co-doped ZnO thin films after thermal treatments

Journal
Thin Solid Films
Journal Volume
570
Journal Issue
PB
Pages
457-463
Date Issued
2014
Author(s)
Li C.-H.
Chung H.
Chen J.-Z.
JIAN-ZHANG CHEN  
I-CHUN CHENG  
DOI
10.1016/j.tsf.2014.02.028
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/425249
URL
https://www2.scopus.com/inward/record.uri?eid=2-s2.0-84912048690&doi=10.1016%2fj.tsf.2014.02.028&partnerID=40&md5=6fe29cd61499e1b29ddb969e9a3dc4ed
Abstract
Rf-sputtered Mg0.05Zn0.95O thin films become amorphous/nanocrystalline with the addition of hafnium oxide. All films (thickness: ? 100 nm) sputter-deposited from HfxMg0.05Zn0.95 - xO targets are highly transparent (> 80%) from 400 to 800 nm. The Tauc bandgap £GE (eV) increases with the Hf content. However, the bandgap decreases after thermal treatment. The reduction in the bandgap is positively correlated with the Hf content and annealing temperature. The residual stresses of films sputtered from Mg0.05Zn0.95O and Hf0.025Mg0.05Zn0.925O targets are determined based on X-ray diffraction (XRD) data using a bi-axial stress model. The residual stresses of as-deposited films are compressive. As the annealing temperature increases, the residual stresses are relaxed and even become tensile. The bandgap narrowing after thermal treatment is attributed to the stress relaxation that changes the repulsion between the oxygen 2p and zinc 4s bands. Slight grain growth may also result in bandgap reduction because bandgap modification caused by the quantum confinement effect becomes significant in amorphous/nanocrystalline materials. The amorphous thin films reveal good thermal stability after 600 ¢XC annealing for up to 2 h, as evidenced by the XRD and transmission spectra. ? 2014 Elsevier B.V.
Subjects
Amorphous oxide
Compound semiconductor
HfMgZnO
MgZnO
Short range ordering
Sputtering
XRD
ZnO
Type
journal article

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