https://scholars.lib.ntu.edu.tw/handle/123456789/425256| Title: | Effects of mechanical strain on electrical properties and stability of £gc-Si thin film transistors on Polyimide | Authors: | Chiu I.-C. Cheng I.-C. Chen J.-Z. Huang J.-J. Chen Y.-P. JIAN-ZHANG CHEN |
Issue Date: | 2009 | Source: | 2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 | Abstract: | The effects of mechanical strain parallel to channel on electron field-effect mobility and electrical stability of £gc-Si thin film transistors (TFTs) on Polyimide have been investigated. The electron field-effect mobility slightly increases with the mechanical strain. However, electrical stability of TFTs becomes worse under some mechanical strain. |
Description: | 2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009,27 April 2009 through 30 April 2009,Taipei |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/425256 |
| Appears in Collections: | 應用力學研究所 |
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