Effects of mechanical strain on electrical properties and stability of £gc-Si thin film transistors on Polyimide
Journal
2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display
Date Issued
2009
Author(s)
Abstract
The effects of mechanical strain parallel to channel on electron field-effect mobility and electrical stability of £gc-Si thin film transistors (TFTs) on Polyimide have been investigated. The electron field-effect mobility slightly increases with the mechanical strain. However, electrical stability of TFTs becomes worse under some mechanical strain.
Type
conference paper