|Title:||Effects of mechanical strain on electrical properties and stability of £gc-Si thin film transistors on Polyimide||Authors:||Chiu I.-C.
|Issue Date:||2009||Source:||2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009||Abstract:||
The effects of mechanical strain parallel to channel on electron field-effect mobility and electrical stability of £gc-Si thin film transistors (TFTs) on Polyimide have been investigated. The electron field-effect mobility slightly increases with the mechanical strain. However, electrical stability of TFTs becomes worse under some mechanical strain.
2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009,27 April 2009 through 30 April 2009,Taipei
|Appears in Collections:||應用力學研究所|
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