Microstructural, electrical, and optical properties of sol-gel derived HfMgZnO thin films
Journal
Materials Research Express
Journal Volume
2
Journal Issue
9
Date Issued
2015
Author(s)
Abstract
This paper reports the characterization of sol-gel derived Hf x Mg 0.05 Zn 0.95-x O(x.=.0, 0.025, 0.05, 0.1) thin films. The films show high transparency (?90%) in the visible light wavelength region. The incorporation of Hf in the thin films increases the bandgap and decreases the crystallinity in the asdeposited films. This may be due to the high bandgap of HfO 2 and the crystal frustrating effect caused by mixing atoms of different sizes. As the annealing temperature increases, the bandgap changes because of the alteration of the stress status, grain growth, and atomic rearrangement. The resistivity also decreases slightly with an increase in the annealing temperature. ? 2015 IOP Publishing Ltd.
Subjects
HfMgZnO
Sol-gel
ZnO
Type
journal article