|Title:||Electromechanical stability of flexible nanocrystalline-silicon thin-film transistors||Authors:||Chiu I.-C.
|Keywords:||Mechanical strain;Nanocrystalline silicon (nc-Si);Semiconductor device measurements;Silicon;Stability;Thin-film transistors (TFTs)||Issue Date:||2010||Journal Volume:||31||Journal Issue:||3||Start page/Pages:||222-224||Source:||IEEE Electron Device Letters||Abstract:||
We have demonstrated inverted staggered bottom-gate back-channel-passivated hydrogenated nanocrystalline-silicon thin-film transistors (TFTs) on colorless polyimide foil substrates. Their electrical performance and stability have been investigated under mechanical flexing. The electron field-effect mobilities and threshold voltages of these TFTs increased as the applied tensile strain increased, but their electrical stability deteriorated under mechanical strain. ? 2006 IEEE.
|Appears in Collections:||應用力學研究所|
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