Electromechanical stability of flexible nanocrystalline-silicon thin-film transistors
Journal
IEEE Electron Device Letters
Journal Volume
31
Journal Issue
3
Pages
222-224
Date Issued
2010
Author(s)
Abstract
We have demonstrated inverted staggered bottom-gate back-channel-passivated hydrogenated nanocrystalline-silicon thin-film transistors (TFTs) on colorless polyimide foil substrates. Their electrical performance and stability have been investigated under mechanical flexing. The electron field-effect mobilities and threshold voltages of these TFTs increased as the applied tensile strain increased, but their electrical stability deteriorated under mechanical strain. ? 2006 IEEE.
Subjects
Mechanical strain
Nanocrystalline silicon (nc-Si)
Semiconductor device measurements
Silicon
Stability
Thin-film transistors (TFTs)
Type
journal article