https://scholars.lib.ntu.edu.tw/handle/123456789/425285| Title: | Electromechanical stability of flexible nanocrystalline-silicon thin-film transistors | Authors: | Chiu I.-C. Huang J.-J. Chen Y.-P. Cheng I.-C. Chen J.Z. Lee M.-H. JIAN-ZHANG CHEN |
Keywords: | Mechanical strain;Nanocrystalline silicon (nc-Si);Semiconductor device measurements;Silicon;Stability;Thin-film transistors (TFTs) | Issue Date: | 2010 | Journal Volume: | 31 | Journal Issue: | 3 | Start page/Pages: | 222-224 | Source: | IEEE Electron Device Letters | Abstract: | We have demonstrated inverted staggered bottom-gate back-channel-passivated hydrogenated nanocrystalline-silicon thin-film transistors (TFTs) on colorless polyimide foil substrates. Their electrical performance and stability have been investigated under mechanical flexing. The electron field-effect mobilities and threshold voltages of these TFTs increased as the applied tensile strain increased, but their electrical stability deteriorated under mechanical strain. ? 2006 IEEE. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/425285 | ISSN: | 07413106 | DOI: | 10.1109/LED.2009.2039023 |
| Appears in Collections: | 應用力學研究所 |
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