https://scholars.lib.ntu.edu.tw/handle/123456789/425285
標題: | Electromechanical stability of flexible nanocrystalline-silicon thin-film transistors | 作者: | Chiu I.-C. Huang J.-J. Chen Y.-P. Cheng I.-C. Chen J.Z. JIAN-ZHANG CHEN I-CHUN CHENG |
關鍵字: | Mechanical strain;Nanocrystalline silicon (nc-Si);Semiconductor device measurements;Silicon;Stability;Thin-film transistors (TFTs) | 公開日期: | 2010 | 卷: | 31 | 期: | 3 | 起(迄)頁: | 222-224 | 來源出版物: | IEEE Electron Device Letters | 摘要: | We have demonstrated inverted staggered bottom-gate back-channel-passivated hydrogenated nanocrystalline-silicon thin-film transistors (TFTs) on colorless polyimide foil substrates. Their electrical performance and stability have been investigated under mechanical flexing. The electron field-effect mobilities and threshold voltages of these TFTs increased as the applied tensile strain increased, but their electrical stability deteriorated under mechanical strain. ? 2006 IEEE. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/425285 | ISSN: | 07413106 | DOI: | 10.1109/LED.2009.2039023 |
顯示於: | 應用力學研究所 |
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