|Title:||Effect of Al/Cu ratios on the optical, electrical, and electrochemical properties of Cu-Al-Ca-O thin films||Authors:||Cheng I.-C.
|Keywords:||Cu-Al-Ca-O thin films;Electrical property;Electrochemical property;Heterojunction diode;Transparent conducting oxide||Issue Date:||2014||Journal Volume:||609||Start page/Pages:||111-115||Source:||Journal of Alloys and Compounds||Abstract:||
This study systematically investigated the effect of various Al/Cu ratios on the optical, electrical, and electrochemical properties of sputter-deposited CuAlx-0.2Ca0.2O (x = 1, 1.25, 1.5, 1.75, 2) thin films. The as-sputtered Cu-Al-Ca-O films were all amorphous regardless of Al/Cu ratio. Both the transmittance and resistivity of the Cu-Al-Ca-O films increased with increasing Al/Cu ratios. Heterojunction diodes fabricated using Al-doped ZnO, ZnO, and Cu-Al-Ca-O thin films of various Al/Cu ratios exhibited high breakdown-voltage values when Cu-Al-Ca-O thin films with high Al/Cu ratios. Optimal rectification ratio and electrical properties were determined in diodes that had CuAl1.3Ca0.2O as their p-layer deposited film. Cu-Al-Ca-O films with high Al/Cu ratios exhibited low average corrosion current density (icorr) values and high breakdown-voltages (Ebr) values, indicating that the corrosion resistance of Cu-Al-Ca-O film increases with increasing Al/Cu ratios. ? 2014 Elsevier B.V. All rights reserved.
|Appears in Collections:||應用力學研究所|
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