|Title:||Nitrogen Atmospheric-Pressure-Plasma-Jet Induced Oxidation of SnOx Thin Films||Authors:||Lin G.-W.
|Keywords:||Atmospheric pressure plasma jet;Oxidation;Sn;SnO;SnO2;SnOx||Issue Date:||2015||Journal Volume:||35||Journal Issue:||6||Start page/Pages:||979-991||Source:||Plasma Chemistry and Plasma Processing||Abstract:||
SnOx thin films that were rf-sputter-deposited under various gas flow ratios ([O2]/([O2]?+?[Ar]) OFR?=?3.0, 3.6, 4.2 and 4.8?%) were rapidly annealed using atmospheric pressure plasma jets (APPJs) in temperature range of ~350¡V386?¢XC for up to 5?min. The original electron probe micro-analysis [O] contents in the as-deposited films were ~25, ~30, ~35 and ~40?% for films deposited at ([O2]/([O2]?+?[Ar]) gas flow ratios OFR?=?3.0, 3.6, 4.2 and 4.8?%, respectively. APPJ annealing increased the [O] content to ~35?% for films deposited at OFR?=?3.0 and 3.6?%, where the [O] content remained in similar levels for films deposited at OFR?=?4.2 and 4.8?%. Crystalline metallic Sn was identified in films as-deposited at OFR?=?3.0 and 3.6?%; on the other hand, an X-ray amorphous SnOx phase was identified in films as-deposited at OFR?=?4.2 and 4.8?%. Crystallization and oxidation by APPJ annealing improved the transmittance and blue-shifted the absorption band edge to ~420?nm. All APPJ-annealed films exhibit n-type conductivity that may be contributed by the mixed phases of SnO, SnO2 and a small amount of Sn. ? 2015, Springer Science+Business Media New York.
|Appears in Collections:||應用力學研究所|
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