https://scholars.lib.ntu.edu.tw/handle/123456789/427797
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | H. T. Chen | en_US |
dc.contributor.author | C. Y. Su | en_US |
dc.contributor.author | C. G. Tu | en_US |
dc.contributor.author | Y. F. Yao | en_US |
dc.contributor.author | C. H. Lin | en_US |
dc.contributor.author | Y. R. Wu | en_US |
dc.contributor.author | Y. W. Kiang | en_US |
dc.contributor.author | C. C. Yang* | en_US |
dc.contributor.author | CHIH-CHUNG YANG | en_US |
dc.creator | YUH-RENN WU;C. C. Yang*;Y. W. Kiang;Y. R. Wu;C. H. Lin;Y. F. Yao;C. G. Tu;C. Y. Su;H. T. Chen | - |
dc.date.accessioned | 2019-10-24T08:01:27Z | - |
dc.date.available | 2019-10-24T08:01:27Z | - |
dc.date.issued | 2017 | - |
dc.identifier.issn | 189383 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/427797 | - |
dc.relation.ispartof | IEEE Transactions on Electron Devices | - |
dc.title | Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-type Conductivity in a p-GaN/u-GaN Alternating-layer Nanostructure | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1109/ted.2016.2631148 | - |
dc.identifier.scopus | 2-s2.0-85001104688 | - |
dc.relation.pages | 710-714 | - |
dc.relation.journalvolume | 64 | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.orcid | 0000-0002-3476-3802 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 光電工程學研究所 |
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