https://scholars.lib.ntu.edu.tw/handle/123456789/427797
Title: | Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-type Conductivity in a p-GaN/u-GaN Alternating-layer Nanostructure | Authors: | H. T. Chen C. Y. Su C. G. Tu Y. F. Yao C. H. Lin Y. R. Wu Y. W. Kiang C. C. Yang* CHIH-CHUNG YANG |
Issue Date: | 2017 | Journal Volume: | 64 | Start page/Pages: | 710-714 | Source: | IEEE Transactions on Electron Devices | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/427797 | ISSN: | 189383 | DOI: | 10.1109/ted.2016.2631148 |
Appears in Collections: | 光電工程學研究所 |
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