High-Performance Solution-Processed ZnSnO TFTs with Tunable Threshold Voltages
Journal
ECS Journal of Solid State Science and Technology
Journal Volume
4
Journal Issue
5
Pages
59-73
Date Issued
2015
Author(s)
Shiao-Po Tsai
Ching-Hsiang Chang
Chao-Jui Hsu
Ching-Chien Hu
Yu-Tang Tsai
Cheng-Hsu Chou
Hsin-Hung Lin
Chung-Chih Wu
Abstract
In this work, we had investigated the solution-processed zinc-tin oxide (ZTO) semiconductors using metal chloride precursors and the sol-gel method. We studied the effects of different processing conditions, such as different procedures of spin-coating and annealing, on thin-film transistor (TFT) characteristics (e.g., mobility, threshold voltages etc.). High-performance In-free solutionprocessed ZTO TFTs with mobilities up to 10-17 cm2/V·s and threshold voltages being tunable from positive to negative (i.e.from enhancement mode to depletion mode) had been achieved. The capability to control operation modes of TFTs provides the freedom to implement higher-performance TFT circuits (e.g. high-gain inverters demonstrated) using only solution-processed n-type ZTO TFTs. Using these two types of ZTO TFTs, depletion-load inverters were implemented, demonstrating enhanced characteristics in inverter characteristics compared to the enhancement-load inverters.
SDGs
Type
journal article