A 51.3-MHz 21.8-ppm/°C CMOS relaxation oscillator with temperature compensation
Journal
IEEE Transactions on Circuits and Systems II: Express Briefs
Journal Volume
64
Journal Issue
5
Pages
490 - 494
Date Issued
2017
Author(s)
Y.-K. Tsai
Abstract
A 51.3-MHz 18-μW 21.8-ppm/°C relaxation oscillator is presented in 90-nm CMOS. The proposed oscillator employs an integrated error feedback and composite resistors to minimize its sensitivity to temperature variations. For a temperature range from -20 °C to 100 °C, the fabricated circuit demonstrates a frequency variation less than ±0.13%, leading to an average frequency drift of 21.8 ppm/°C. As the supply voltage changes from 0.8 to 1.2 V, the frequency variation is ±0.53%. The measured rms jitter and phase noise at 1-MHz offset are 89.27 ps and -83.29 dBc/Hz, respectively. © 2004-2012 IEEE.
Subjects
Integrated error feedback (IEF); low power; relaxation oscillator; temperature compensation
SDGs
Other Subjects
CMOS integrated circuits; Error compensation; Feedback; Phase noise; Sensitivity analysis; Temperature distribution; Average frequency; CMOS relaxation oscillators; Frequency variation; Integrated errors; Low Power; Sensitivity to temperatures; Temperature compensation; Temperature range; Relaxation oscillators
Type
journal article