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  1. NTU Scholars
  2. 電機資訊學院
  3. 電機工程學系
Please use this identifier to cite or link to this item: https://scholars.lib.ntu.edu.tw/handle/123456789/428005
Title: Effective g factor of low-density two-dimensional holes in a Ge quantum well
Authors: T. M. Lu
C. T. Harris
S. –H. Huang
Y. Chuang
Jiun-Yun Li
CHEE-WEE LIU 
JIUN-YUN LI 
CHEE-WEE LIU 
Issue Date: 2017
Journal Volume: 111
Journal Issue: 10
Start page/Pages: 107-112
Source: Applied Physics Letters
Abstract: 
We report the measurements of the effective g factor of low-density two-dimensional holes in a Ge quantum well. Using the temperature dependence of the Shubnikov-de Haas oscillations, we extract the effective g factor in a magnetic field perpendicular to the sample surface. Very large values of the effective g factor, ranging from ∼13 to ∼28, are observed in the density range of 1.4×1010 cm-2- 1.4×1011 cm-2. When the magnetic field is oriented parallel to the sample surface, the effective g factor is obtained from a protrusion in the magneto-resistance data that signify full spin polarization. In the latter orientation, a small effective g factor, ∼1.3-1.4, is measured in the density range of 1.5×1010 cm-2- 2×1010 cm-2. This very strong anisotropy is consistent with theoretical predictions and previous measurements in other 2D hole systems, such as InGaAs and GaSb. © 2017 Author(s).
URI: https://scholars.lib.ntu.edu.tw/handle/123456789/428005
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85029286339&doi=10.1063%2f1.4990569&partnerID=40&md5=b407ceeed58cffeaffe945ec862d8533
ISSN: 36951
DOI: 10.1063/1.4990569
SDG/Keyword: Gallium alloys; Germanium; Indium alloys; Magnetic fields; Spin polarization; Temperature distribution; Density range; Effective g-factor; Ge quantum well; Measurements of; Sample surface; Shubnikov de-Haas oscillation; Strong anisotropy; Temperature dependence; Semiconductor quantum wells
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