https://scholars.lib.ntu.edu.tw/handle/123456789/428055
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | C. S. Chang Chien | en_US |
dc.contributor.author | H. M. Chang | en_US |
dc.contributor.author | W. T. Lee | en_US |
dc.contributor.author | M. R. Tang | en_US |
dc.contributor.author | CHAO-HSIN WU | en_US |
dc.contributor.author | SI-CHEN LEE | en_US |
dc.creator | Chang Chien C.-S;Chang H.-M;Lee W.-T;Tang M.-R;Wu C.-H;Lee S.-C. | - |
dc.date.accessioned | 2019-10-24T08:30:47Z | - |
dc.date.available | 2019-10-24T08:30:47Z | - |
dc.date.issued | 2017 | - |
dc.identifier.issn | 21583226 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/428055 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85028607129&doi=10.1063%2f1.4996136&partnerID=40&md5=0212259a1b75fd0bb9ead0b43ac2732e | - |
dc.description.abstract | An ohmic contact of graphene/MoS2 heterostructure is determined by using ultraviolet photoelectron spectroscopy (UPS). Since graphene shows a great potential to replace metal contact, a direct comparison of Cr/Au contact and graphene contact on the MoS2 thin film transistor (TFT) is made. Different from metal contacts, the work function of graphene can be modulated. As a result, the subthreshold swing can be improved. And when Vg<VFB, the intrinsic graphene changes into p-type, so graphene contact can achieve lower off current by lowering the Fermi level. To further improve the performance of MoS2 TFT, a new method using graphene contact first and MoS2 layer last process that can avoid PMMA residue and high processing temperature is applied. MoS2 TFT using this method shows on/off current ratio up to 6×106 order of magnitude, high mobility of 116 cm2/V-sec, and subthreshold swing of only 0.515 V/dec. © 2017 Author(s). | - |
dc.relation.ispartof | AIP Advance | - |
dc.subject.other | Field effect transistors; Graphene; Ohmic contacts; Processing; Thin film transistors; Ultraviolet photoelectron spectroscopy; Graphene contacts; High mobility; High processing temperatures; Metal contacts; Off current; ON/OFF current ratio; P-type; Subthreshold swing; Graphene transistors | - |
dc.title | High Performance MoS2 TFT using Graphene Contact First Process | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1063/1.4996136 | - |
dc.identifier.scopus | 2-s2.0-85028607129 | - |
dc.relation.pages | 1579-1598 | - |
dc.relation.journalvolume | 7 | - |
dc.relation.journalissue | 8 | - |
item.fulltext | no fulltext | - |
item.cerifentitytype | Publications | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | none | - |
item.openairetype | journal article | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Program in Semiconductor Device, Material, and Hetero-integration | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | TSMC-NTU Joint Research Center | - |
crisitem.author.orcid | 0000-0001-7849-773X | - |
crisitem.author.orcid | 0000-0002-3788-2030 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Graduate School of Advanced Technology | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
顯示於: | 電機工程學系 |
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