Continuous-wave and Time-resolved Photoluminescence of GaN LED grown on amorphous SiC buffer
Journal
Asia Communication and Photonics Conference 2016(ACP 2016)
Date Issued
2016
Author(s)
Abstract
GaN LED grown upon amorphous SiC buffer is demonstrated. Its PL peak is red-shifted to 442 nm because of the decreased compressive strain induced by lattice mismatch when changing the SiC buffer to C-rich condition.
Type
conference paper