Transconductance Sensitivity Enhancement in Gated-MIS(p) Tunnel Diode by Self-Protective Effective Local Thinning Mechanism
Journal
Applied Physics Letters
Journal Volume
109
Journal Issue
6
Pages
83-97
Date Issued
2016
Author(s)
Abstract
Gated-MIS tunnel diode with ultrathin oxide has been proposed as a transconductance device. The on/off current ratio of a device is sensitive to oxide thickness. For thicker oxide, the on/off current ratio and transconductance sensitivity are inferior due to the lower oxide tunneling rate. In this work, a technique of utilizing the effective local thinning effect created by positive voltage stress (PVS), which only occurs with the oxide thickness larger than about 3 nm, is demonstrated to improve the on/off current ratio and transconductance sensitivity. After PVS, the on/off current ratio and transconductance sensitivity are strongly enhanced by the creation of an effective local thinning at the edge of the MIS(p) tunnel diode. A transconductance of 8.5 × 10−7 S was found in gated-MIS(p) tunnel diode operated at VTD = 0.5 V and VG ≅ −0.12 V after PVS treatment in contract to that of 1.8 × 10−10 S before PVS.
SDGs
Type
journal article